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Toshiba – MG300H1US1 – IGBT Power Module – 500V 300A – Reclaimed Part

Manufacturer

OEM Part Number

MG300H1US1

GPS Part Number

27-TOS-MG300H1US1

Tags

Price:

$68.87

Specifications
Voltage WPC AH/kVA Length Width Height Weight
1000 V N/A 300 A N/A N/A N/A ≈  210  g
Voltage 1000 V
WPC N/A
Amp/H 300 A
Length N/A
Width N/A
Height N/A
Weight ≈  210  g

Toshiba — MG300H1US1 IGBT Power Module 500 V • 300 A • Single N-Channel IGBT • Built-In Freewheel Diode • Isolated Baseplate
What it is

The Toshiba MG300H1US1 is a high-current 500 V, 300 A N-channel IGBT power module designed for high-power switching and motor-control applications. The single-switch module combines a high-current IGBT switching element with a built-in reverse-connected freewheel diode in an electrically isolated industrial package.

Designed for demanding power-conversion equipment, the MG300H1US1 provides high input impedance, fast switching and substantial current capability. Typical applications include industrial motor drives, UPS and inverter systems, DC choppers, welding equipment and other high-current switching circuits.

At-a-Glance
  • Voltage Rating: 500 V
  • Current Rating: 300 A
  • Device Type: N-channel IGBT power module
  • Configuration: Single-switch / 1U power module
  • Integrated Diode: Built-in reverse-connected freewheel diode
  • Package: Toshiba 2-109A4A • 4-pin power module
  • Mounting: Heatsink-mounted module with electrically isolated base
  • Applications: Motor drives; inverters; UPS systems; DC choppers; welders; industrial power switching
Features
  • 300 A current capability — designed for demanding high-current industrial switching applications.
  • High input impedance — insulated-gate construction simplifies drive requirements compared with legacy bipolar power transistors.
  • Fast switching — Toshiba specifies fast switching characteristics for high-power switching and motor-control applications.
  • Built-in freewheel diode — integrated reverse-connected diode supports inductive-load switching.
  • Single-switch construction — 1U configuration provides one high-current IGBT switching stage in a compact module.
  • Electrically isolated base — simplifies heatsink mounting and equipment integration.
Technical Specifications
Parameter Value
Manufacturer Toshiba
Part Number MG300H1US1
Device Type N-channel IGBT power module
Configuration Single-switch / 1U IGBT module with built-in freewheel diode
Collector-Emitter Voltage 500 V
Collector Current 300 A
Semiconductor Type Silicon N-channel insulated-gate bipolar transistor
Integrated Diode Built-in reverse-connected freewheel diode
Switching Characteristic High-speed power switching; Toshiba legacy documentation specifies tf ≤ 1.0 µs
Package Toshiba 2-109A4A
Terminal Count 4-pin
Mounting Industrial heatsink-mounted power module
Base Electrically isolated mounting base
Typical Applications Motor control; industrial inverters; UPS systems; DC choppers; welding equipment; high-power switching
Applications / Replacement Considerations
Module Representative Applications Replacement Notes
MG300H1US1 Industrial motor drives; inverters; UPS systems; DC choppers; welders; high-current switching equipment Verify the 500 V rating, 300 A current capability, 1U circuit configuration, terminal layout, gate-drive requirements, dimensions and thermal requirements before substitution.
Why Buy from Gruber
  • Power electronics expertise — Decades of experience supporting UPS, inverter and critical-power systems.
  • Legacy component support — Hard-to-find and obsolete Toshiba IGBT modules for maintaining legacy equipment.
  • Replacement assistance — Help matching IGBT configuration, electrical ratings, gate-drive requirements and mechanical fit for legacy power equipment.