Toshiba – MG75J2YS45 – IGBT Half-Bridge Power Module – 600V 75A – Reclaimed Part

Toshiba — MG75J2YS45 IGBT Power Module 600 V • 75 A • Complete Half-Bridge • 2 N-Channel IGBTs with Built-In Diodes • Isolated Baseplate

What it is

The Toshiba MG75J2YS45 is a 600 V, 75 A N-channel IGBT power module designed for industrial power-control applications. The module contains two series-connected IGBT switching elements with built-in diodes in a center-tap configuration, forming a complete half-bridge power stage.

The MG75J2YS45 combines high-current switching capability with an integrated two-element power configuration in Toshiba’s compact 2-94D1A package. Representative applications include industrial motor drives, UPS inverters, DC choppers, power converters, welding equipment and other high-current switching systems.

At-a-Glance

• Voltage Rating: 600 V
• Collector Current: 75 A
• Topology: Complete half-bridge / 2U configuration
• Switching Elements: 2 N-channel IGBTs
• Configuration: Series-connected, center-tap
• Integrated Diodes: Built-in freewheel diodes
• Maximum V_CE(sat): 2.5 V
• Package: Toshiba 2-94D1A

Features

• 600 V / 75 A power class — designed for demanding industrial power-control applications.
• Complete half-bridge — two IGBT switching elements integrated into one 2U power module.
• Low saturation voltage — V_CE(sat) rated at 2.5 V maximum.
• Built-in diodes — integrated diode paths support inductive-load switching and power-conversion applications.
• N-channel IGBT technology — high input impedance and efficient gate-controlled switching.
• Industrial flange-mount package — designed for secure mounting to an appropriate heatsink.

Technical Specifications

Applications / Replacement Considerations