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$127.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 200 A | N/A | N/A | N/A | 380 – 420 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 380 – 420 g |
600Â V, 200Â A dual IGBT power module (two-transistor half-bridge) with reverse-connected super-fast free-wheel diodes
and an insulated baseplate. A proven workhorse for UPS bridges, industrial drives, and general-purpose inverters where low
VCE(sat), wide SOA, and straightforward thermal integration are required.
| Parameter | Value |
| Manufacturer | Powerex (Mitsubishi build) |
| Part Number | CM200DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Collector Current (IC) | 200 A (Tc=25 °C); 400 A peak (pulse) |
| Max Collector Dissipation (Pc) | ≈ 780–890 W @ Tc=25 °C |
| VCE(sat) | typ. ≈ 1.7–1.8 V / max ≈ 2.2 V @ VGE=15 V, IC=200 A, 25 °C |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | ≈ 5–7 V (typ. 6 V) |
| Capacitances (typ.) | Cies ≈ 60–80 nF; Coes ≈ 3 nF; Cres ≈ 1.6 nF |
| Total Gate Charge | QG ≈ 1000–1200 nC @ 300–600 V, 200 A, 15 V |
| Diode (FWDi) | VF ≈ 2.0–2.5 V @ 200 A; trr ≈ 0.2–0.3 µs |
| Thermal Resistance | RthJC(IGBT, 1/2) ≈ 0.10–0.12 °C/W; RthJC(Diode, 1/2) ≈ 0.15–0.18 °C/W |
| Isolation | 2.5 kVRMS / 1 min (terminals–baseplate) |
| Operating / Storage | Tj −40…+150 °C; Tstg −40…+125 °C |
| Dimensions / Weight | ~108 × 62 × 30 mm; ≈ 380–420 g |
| Torque (typ.) | M6 terminals & mounting ≈ 4.5 N·m (≈ 40 in-lb) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM200DU-12F | UPS inverter/rectifier bridges; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |
