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$127.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 150 A | N/A | N/A | N/A | 310 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 310 g |
600Â V, 150Â A dual IGBT power module (half-bridge) with reverse-connected super-fast free-wheel diodes.
Low VCE(sat), manageable gate charge, and a 2.5Â kVRMS insulated baseplate make it a solid fit for UPS,
motor drives, and general-purpose inverters.
| Parameter | Value |
| Manufacturer | Powerex (Mitsubishi build) |
| Part Number | CM150DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Collector Current (IC) | 150 A (Tc=25 °C); 300 A (pulse) |
| Maximum Collector Dissipation (Pc) | 520 W @ Tc=25 °C |
| VCE(sat) | typ. 1.6 V / max 2.2 V @ VGE=15 V, IC=150 A (Tj=25 °C); typ. 1.6 V @ 125 °C |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | 5–7 V (typ. 6 V) |
| Capacitances (typ.) | Cies 41Â nF; Coes 2.7Â nF; Cres 1.5Â nF |
| Total Gate Charge | QG typ. 930Â nC @ 300Â V, 150Â A, 15Â V |
| Switching Times (typ.) | td(on) 120 ns; tr 100 ns; td(off) 350 ns; tf 250 ns (VCC=300 V, IC=150 A, ±15 V, RG=4.2 Ω) |
| Diode (FWDi) | VEC max 2.6 V @ 150 A; trr 150 ns; Qrr 2.8 µC |
| Thermal Resistance | RthJC(IGBT, 1/2) 0.24 °C/W; RthJC(Diode, 1/2) 0.47 °C/W; RthCF (module, greased) 0.07 °C/W; RthJC* (chip-ref.) 0.19 °C/W |
| Isolation | 2.5 kVRMS / 1 min (terminals–baseplate) |
| Operating / Storage | Tj −40…+150 °C; Tstg −40…+125 °C |
| Torque / Weight | M5 terminals 2.5–3.5 N·m; M6 mounts 3.5–4.5 N·m; ~310 g |
| Package / Footprint | Approx. 94 × 48 × 30 mm; 80 mm hole spacing |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM150DU-12F | UPS inverter/rectifier bridges; AC motor drives; industrial power | Observe isolation and torque specs; use recommended thermal interface per outline. |