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$44.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 75 A | N/A | N/A | N/A | 350 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 350 g |
600Â V, 75Â A dual IGBT power module (half-bridge) with reverse-connected super-fast free-wheel diodes.
Low VCE(sat), moderate gate charge, and a 2.5Â kVRMS insulated baseplate for straightforward thermal/EMC design in UPS,
motor drives, and high-power inverters.
| Parameter | Value |
| Manufacturer | Powerex (Mitsubishi build) |
| Part Number | CM75DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Collector Current (IC) | 75 A (Tc=25 °C); 150 A peak (pulse) |
| Max Collector Dissipation (Pc) | 290 W @ Tc=25 °C |
| VCE(sat) | typ. 1.6 V / max 2.2 V @ VGE=15 V, IC=75 A, 25 °C (typ. 1.6 V @ 125 °C) |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | 5–7 V (typ. 6 V) |
| Capacitances (typ.) | Cies 20Â nF; Coes 1.4Â nF; Cres 0.75Â nF |
| Switching Times (typ.) | td(on) 100 ns; tr 80 ns; td(off) 300 ns; tf 250 ns (VCC=300 V, IC=75 A, ±15 V, RG=8.3 Ω) |
| Diode (FWDi) | trr 150 ns; Qrr 1.4 µC; VEC max 2.6 V @ 75 A |
| Thermal Resistance | RthJC(IGBT, 1/2) 0.43 °C/W (0.29 °C/W under-chip ref.); RthJC(Diode, 1/2) 0.90 °C/W; RthCF(module, greased) 0.055 °C/W |
| Isolation | 2.5 kVRMS / 1 min (terminals–baseplate) |
| Operating / Storage | Tj −40…+150 °C; Tstg −40…+125 °C |
| Hardware / Mass | M5 terminals & mounts, 40 in-lb; ≈ 310 g |
| Package / Footprint | Approx. 94 × 48 × 30 mm; 80 mm hole spacing (see outline) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM75DU-12F | UPS inverter/rectifier bridges; AC motor drives; battery-powered supplies | Observe 2.5Â kV isolation and thermal interface guidance; torque M5 to 40Â in-lb. |
