Toshiba – MG75J2YS40 – IGBT Half-Bridge Power Module – 600V 75A – Reclaimed Part

Toshiba — MG75J2YS40 IGBT Power Module 600 V • 75 A • Complete Half-Bridge • 2 N-Channel IGBTs with Built-In Freewheel Diodes • Isolated Baseplate

What it is

The Toshiba MG75J2YS40 is a 600 V, 75 A IGBT power module designed for high-power switching and motor-control applications. The module contains two N-channel IGBT switching elements in a series-connected, center-tap configuration with built-in freewheel diodes, forming a complete half-bridge power stage.

Designed for industrial power conversion, the MG75J2YS40 combines high input impedance, fast switching and integrated freewheel diodes in a compact flange-mount package. Representative applications include industrial motor drives, UPS inverters, DC choppers, power converters and other high-current switching systems.

At-a-Glance

• Voltage Rating: 600 V V_CES
• Collector Current: 75 A continuous
• Pulse Current: 150 A, 1 ms
• Topology: Complete half-bridge / 2U configuration
• Switching Elements: 2 N-channel IGBTs
• Integrated Diodes: Built-in freewheel diodes
• Maximum V_CE(sat): 3.5 V
• Maximum Fall Time: 0.35 µs
• Applications: Motor drives; UPS inverters; DC choppers; industrial power control

Features

• 600 V / 75 A power class — designed for demanding industrial power-control applications.
• Complete half-bridge — two IGBT switching elements integrated into one 2U power module.
• Built-in freewheel diodes — integrated diode paths support inductive-load switching.
• High-speed switching — maximum fall time of 0.35 µs.
• High input impedance — insulated-gate construction simplifies gate-drive requirements.
• Isolated construction — designed for secure flange mounting to an appropriate heatsink.

Technical Specifications

Applications / Replacement Considerations