Toshiba – MG400J1US1 – IGBT Power Module – 600V 400A – Reclaimed Part

Toshiba — MG400J1US1 IGBT Power Module 600 V • 400 A • Single N-Channel IGBT • Built-In Freewheel Diode • Isolated Baseplate

What it is

The Toshiba MG400J1US1 is a high-current 600 V, 400 A silicon N-channel IGBT power module designed for high-power switching and motor-control applications. Its single-switch / 1U configuration combines one high-current IGBT switching element with a built-in reverse-connected freewheel diode in an industrial power-module package.

Designed for demanding power-conversion equipment, the MG400J1US1 combines high input impedance, fast switching and substantial current capability. Typical applications include industrial motor drives, UPS and inverter systems, DC choppers, welding equipment and other high-current switching circuits.

At-a-Glance

• Voltage Rating: 600 V
• Current Rating: 400 A
• Device Type: Silicon N-channel IGBT power module
• Configuration: Single-switch / 1U
• Integrated Diode: Built-in reverse-connected freewheel diode
• Switching Speed: t_f ≤ 0.35 µs
• Diode Recovery: t_rr ≤ 0.25 µs
• Applications: Motor drives; UPS; industrial inverters; DC choppers; welders

Features

• 600 V / 400 A power class — designed for demanding high-current industrial switching applications.
• Single-switch configuration — one high-current IGBT switching element in Toshiba’s 1U module architecture.
• High input impedance — insulated-gate construction simplifies gate-drive requirements.
• Fast switching — fall time rated at 0.35 µs maximum.
• Built-in freewheel diode — integrated reverse-connected diode with reverse-recovery time up to 0.25 µs.
• Low saturation voltage — V_CE(sat) rated at 4.0 V maximum under specified test conditions.
• Industrial module construction — designed for direct heatsink mounting in high-power equipment.

Technical Specifications

Applications / Replacement Considerations