Toshiba – MG300Q1US11 – IGBT Power Module – 1200V 300A – Reclaimed Part

Toshiba — MG300Q1US11 IGBT Power Module 1200 V • 300 A • Single N-Channel IGBT • Built-In Freewheel Diode • Isolated Baseplate

What it is

The Toshiba MG300Q1US11 is a high-current 1200 V, 300 A silicon N-channel IGBT power module designed for high-power switching and motor-control applications. Its single-switch / 1U configuration combines one high-current IGBT with a built-in reverse-connected freewheel diode in an electrically isolated industrial module.

With a 2000 W collector power-dissipation rating, high input impedance and fast switching capability, the MG300Q1US11 is designed for demanding industrial power-conversion equipment. Typical applications include variable-frequency drives, UPS and inverter systems, DC choppers, welding equipment and other high-current switching circuits.

At-a-Glance

• Voltage Rating: 1200 V V_CES
• Collector Current: 300 A
• Device Type: Silicon N-channel IGBT
• Configuration: Single-switch / 1U
• Integrated Diode: Built-in reverse-connected freewheel diode
• Gate-Emitter Voltage: ±20 V
• Power Dissipation: 2000 W @ T_C = 25°C
• Applications: Motor drives; UPS; industrial inverters; DC choppers; welders

Features

• 1200 V / 300 A power class — designed for demanding high-voltage, high-current industrial switching applications.
• Single-switch configuration — one high-current IGBT switching element in Toshiba’s 1U module architecture.
• Built-in freewheel diode — integrated reverse-connected diode supports inductive-load switching.
• High input impedance — insulated-gate construction provides efficient gate-drive control.
• High-speed switching — designed for inverter and motor-control power stages.
• Electrically isolated baseplate — simplifies heatsink installation in industrial power assemblies.

Technical Specifications

Applications / Replacement Considerations