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$68.63
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 300 A | N/A | N/A | N/A | ≈  450 – 470 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  450 – 470 g |
1200Â V / 300Â A single IGBT power module for high-power switching and motor-control inverters. Integrates a reverse-connected fast/soft diode; terminals are isolated from the baseplate for easier heatsinking.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG300Q1US11 |
| Device Type | Single IGBT with antiparallel fast/soft diode |
| Collector-Emitter Voltage (VCES) | 1200Â V |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Continuous Collector Current (IC) | 300Â A (DC) |
| Pulse Collector Current (ICP, 1Â ms) | 600Â A |
| Forward Diode Current (IF / IFM) | 300Â A / 600Â A |
| VCE(sat) (typ./max) | 2.2 / 2.7Â V @ IC=300Â A, VGE=15Â V |
| Gate Threshold (VGE(OFF)) | 3.0 – 6.0 V @ IC=300 mA, VCE=5 V |
| Input Capacitance (Cies) | ≈ 42,000 pF (VCE=10 V, f=1 MHz) |
| Switching (typ./max) | tr 0.3/0.6 µs; ton 0.4/0.8 µs; tf 0.6/1.0 µs; toff 1.2/1.8 µs |
| Diode (per leg) | VF 2.0 V typ / 3.0 V max @ 300 A; trr 0.25/0.5 µs |
| Thermal Resistance RthJC | Transistor 0.056 °C/W; Diode 0.20 °C/W |
| Collector Power Dissipation (PC) | 2000 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-109A4A; ≈ 465 g |
| Screw Torque (Terminal / M4 / M6 / Mount) | 2 / 3 / 3 N·m |
| Configuration | Single switch (Q1 series) |
| Module | Applications | Notes |
| MG300Q1US11 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout, torque, gate-drive limits, and cooling; observe isolation rating. |
