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$149.78
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 75 A | N/A | N/A | N/A | ≈  400 – 450 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  400 – 450 g |
The Siemens / EUPEC BSM75GB120DN2 is a 1200 V IGBT half-bridge power module designed for industrial inverter and high-power switching applications. The module incorporates two IGBT switching elements in a half-bridge configuration with integrated fast freewheeling diodes and an electrically insulated metal baseplate.
The BSM75GB120DN2 is rated for 75 A continuous collector current at a case temperature of 80°C and up to 105 A at 25°C. Its rugged half-bridge architecture makes it suitable for UPS inverters, industrial motor drives, welding equipment, switched-mode power supplies and other legacy high-power conversion systems.
| Parameter | Value |
| Manufacturer | Siemens / EUPEC |
| Part Number | BSM75GB120DN2 |
| Ordering Code | C67076-A2106-A70 |
| Customer / Option Code | BSM-75GB-120DN2-98331 — verify OEM option requirements before substitution |
| Device Type | IGBT power module with integrated fast freewheeling diodes |
| Circuit Configuration | Half-bridge |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Collector-Gate Voltage (VCGR) | 1200 V @ RGE = 20 kΩ |
| DC Collector Current (IC) | 105 A @ TC = 25°C; 75 A @ TC = 80°C |
| Pulsed Collector Current (ICpuls) | 210 A @ TC = 25°C; 150 A @ TC = 80°C; tp = 1 ms |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Power Dissipation per IGBT | 625 W @ TC = 25°C |
| Gate Threshold Voltage (VGE(th)) | 4.5 V min • 5.5 V typ • 6.5 V max |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 V typ / 3.0 V max @ IC = 75 A, VGE = 15 V, Tj = 25°C |
| VCE(sat) @ 125°C | 3.1 V typ / 3.7 V max @ IC = 75 A, VGE = 15 V |
| Transconductance (gfs) | 31 S min @ VCE = 20 V, IC = 75 A |
| Input Capacitance (Ciss) | 5.5 nF typical |
| Output Capacitance (Coss) | 0.8 nF typical |
| Reverse Transfer Capacitance (Crss) | 0.3 nF typical |
| Turn-On Delay (td(on)) | 30 ns typ / 60 ns max @ VCC = 600 V, IC = 75 A, RG = 15 Ω |
| Rise Time (tr) | 70 ns typ / 140 ns max |
| Turn-Off Delay (td(off)) | 450 ns typ / 600 ns max |
| Fall Time (tf) | 70 ns typ / 100 ns max |
| Diode Forward Voltage (VF) | 2.3 V typ / 2.8 V max @ IF = 75 A, Tj = 25°C |
| Diode Reverse Recovery Time (trr) | 0.125 µs typical @ IF = 75 A, VR = −600 V, Tj = 125°C |
| Diode Reverse Recovery Charge (Qrr) | 3.2 µC typ @ 25°C • 12 µC typ @ 125°C |
| Thermal Resistance RthJC — IGBT | ≤ 0.20 K/W |
| Thermal Resistance RthJCD — Diode | ≤ 0.50 K/W |
| Isolation Voltage | 2500 V AC for 1 minute |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Creepage Distance | 20 mm |
| Clearance | 11 mm |
| Baseplate | Electrically insulated metal baseplate |
| Configuration | IGBT half-bridge with integrated fast freewheeling diodes |
| Module | Representative Applications | Replacement Notes |
| BSM75GB120DN2 | UPS inverters; industrial motor drives; welding equipment; switched-mode power supplies; industrial inverter systems | Verify 1200 V rating, GB half-bridge topology, gate-drive characteristics, terminal layout, package dimensions and thermal requirements before substitution. |
