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$149.78
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 75 A | N/A | N/A | N/A | ≈  400 – 450 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  400 – 450 g |
1200Â V / 75Â A dual IGBT half-bridge module widely used in UPS inverters, motor drives, and high-power SMPS. Low-loss IGBTs paired with fast, soft-recovery free-wheel diodes in a low-inductance 62 mm package; insulated baseplate simplifies heatsinking and grounding.
| Parameter | Value |
| Collector-Emitter Voltage (VCES) | 1200Â V |
| Continuous Collector Current (IC) | 75 A @ Tc=25 °C (≈ 50 A @ 125 °C) |
| Pulse Collector Current (ICM) | ≥ 150 A (≤ 1 ms, Tj limit) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Isolation (terminals↔base) | 2.5 kVRMS / 1 min |
| VCE(sat) (typ.) | ≈ 2.1 V @ IC=75 A, VGE=15 V, 25 °C |
| Diode Forward Voltage (VF) | ≈ 2.0 V @ IF=75 A, 25 °C |
| Gate Threshold (VGE(th)) | ≈ 4.5…7.5 V |
| Total Gate Charge (QG) | ≈ 450–500 nC @ 600 V, 75 A, 15 V |
| Capacitances (typ.) | Cies ≈ 20 nF; Coes ≈ 1.4 nF; Cres ≈ 0.8 nF |
| td(on) / tr | ≈ 0.10 µs / 0.08 µs @ VCC=300 V, IC=75 A, ±15 V |
| td(off) / tf | ≈ 0.30 µs / 0.25 µs (Tj=125 °C) |
| Diode trr / Qrr (typ.) | ≈ 0.20 µs / 3–4 µC |
| Rth(j-c) (IGBT / Diode) | ≈ 0.37 K/W / ≈ 0.65 K/W (per chip) |
| Package / Dimensions / Mass | 62 mm class; ~108 × 62 × 30 mm; ≈ 400–450 g |
| Configuration | Dual (2-pack) half-bridge with antiparallel fast diodes |
| Module | Applications | Notes |
| BSM75GB120DN2 | UPS; drives; welders; high-power SMPS; DC-link choppers | Use recommended gate resistors; observe isolation and thermal limits; torque per 62Â mm spec. |
