Shop Products

Our Companies

Call Now For Support
1-800-658-5883

MITSUBISHI – CM300DU-12H – IGBT Power Module – 600V 300A Dual Half-Bridge – Reclaimed Part

Manufacturer

OEM Part Number

CM300DU-12H

GPS Part Number

27-MIT-CM300DU-12H

Tags

Price:

$180.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
600 V N/A 300 A N/A N/A N/A 500 – 600 g
Voltage 600 V
WPC N/A
Amp/H 300 A
Length N/A
Width N/A
Height N/A
Weight 500 – 600 g
Mitsubishi Electric / Powerex — CM300DU-12H IGBT Power Module
600 V • 300 A • Dual IGBT Half-Bridge • 2 IGBTs + Antiparallel Fast Diodes • Isolated Baseplate • Reclaimed Part
What it is

The Mitsubishi Electric / Powerex CM300DU-12H is a high-current 600 V, 300 A dual IGBT power module containing two power IGBTs arranged as a half-bridge. Each switching device incorporates a reverse-connected fast free-wheel diode, providing the current paths required for efficient operation with inductive loads in inverter, motor-drive, UPS, and industrial power-conversion systems.

The two-device configuration provides a complete inverter leg in one rugged module, reducing external high-current interconnections and simplifying busbar, heatsink, and service design. Its isolated baseplate allows the module to be mounted directly to a properly prepared heatsink while maintaining electrical isolation between the semiconductor circuit and cooling surface.

With a 300 A continuous-current class rating and substantial short-duration current capability, the CM300DU-12H is suited to demanding UPS inverter and rectifier stages, variable-frequency drives, industrial motor controls, welding equipment, DC choppers, and other high-power switching applications. It is also valuable as a replacement component in legacy power electronics where the original Mitsubishi module must be matched for voltage, current, circuit configuration, gate drive, terminal arrangement, and mechanical footprint.

At-a-Glance
  • Manufacturer: Mitsubishi Electric / Powerex
  • Part Number: CM300DU-12H
  • Voltage / Current: 600 V / 300 A
  • Peak Collector Current: Approximately 600 A pulsed
  • Topology: Dual IGBT half-bridge
  • Semiconductors: 2 IGBTs with antiparallel fast free-wheel diodes
  • Gate Rating: ±20 V maximum
  • Isolation: 2.5 kV RMS / 1 minute
  • Mounting: Screw-mount with isolated baseplate
  • Use Cases: UPS systems; motor drives; industrial inverters; welders; high-power converters
  • Condition: Reclaimed Part
Features
  • High-current capability — 300 A continuous-current class with substantial pulsed-current capability for demanding power-conversion systems.
  • Dual half-bridge design — Two IGBTs provide a complete inverter leg within a single module.
  • Low conduction loss — Low VCE(sat) helps reduce semiconductor conduction losses under heavy load.
  • Fast free-wheel diodes — Integrated antiparallel diodes support efficient commutation with inductive loads.
  • Wide switching SOA — Designed for demanding inverter and motor-control switching environments.
  • Rugged gate structure — ±20 V maximum gate-emitter rating supports standard industrial IGBT gate-drive systems.
  • Isolated baseplate — Simplifies mounting to a common heatsink while maintaining electrical isolation.
  • Legacy equipment support — Useful for maintaining UPS and industrial systems built around Mitsubishi dual IGBT power modules.
Technical Specifications
Parameter Value
Manufacturer Mitsubishi Electric / Powerex
Part Number CM300DU-12H
Device Type Dual IGBT half-bridge with antiparallel fast diodes
Circuit Configuration Dual / 2-pack half-bridge
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) 300 A @ TC=25 °C
Peak Collector Current Approximately 600 A pulsed
Maximum Collector Dissipation Approximately 1.2 kW @ TC=25 °C
VCE(sat) Approximately 1.8–2.1 V typical / approximately 2.5 V maximum @ VGE=15 V, IC=300 A, 25 °C
Gate-Emitter Voltage (VGES) ±20 V maximum
Gate Threshold Voltage (VGE(th)) Approximately 5–7 V; approximately 6 V typical
Free-Wheel Diode Forward Voltage Approximately 2.2–2.8 V @ 300 A
Free-Wheel Diode Fast-recovery antiparallel diode integrated with each IGBT
IGBT Thermal Resistance RthJC Approximately 0.08–0.10 °C/W per IGBT
Diode Thermal Resistance RthJC Approximately 0.12–0.15 °C/W per diode
Isolation Test Voltage 2.5 kV RMS / 1 minute, terminals-to-baseplate
Operating Junction Temperature −40 °C to +150 °C
Storage Temperature −40 °C to +125 °C
Approximate Dimensions 108 × 62 × 30 mm class
Approximate Weight Approximately 500–600 g
Terminal / Mounting Torque Approximately 4.5 N·m (40 in-lb) for M6 hardware
Baseplate Electrically isolated metal baseplate
Configuration Dual IGBT half-bridge
Condition Reclaimed Part
Compatibility / Representative Uses
Module Representative Applications Replacement Notes
CM300DU-12H UPS inverter/rectifier bridges; variable-frequency drives; industrial motor controls; welding equipment; DC choppers; high-power industrial converters Confirm the complete CM300DU-12H part number, voltage and current ratings, terminal arrangement, gate-drive requirements, mechanical footprint, mounting hardware, and cooling requirements before substitution.
Why Buy from Gruber
  • Power electronics expertise — Experience supporting semiconductor modules used in UPS, inverter, motor-drive, and critical-power equipment.
  • Reclaimed legacy components — Hard-to-find Mitsubishi and Powerex modules for maintaining equipment where original semiconductor assemblies may no longer be readily available.
  • Tested components — Reclaimed modules can be inspected for semiconductor junction behavior, continuity, terminal condition, and baseplate condition prior to resale.
  • Traceability — Modules can be tracked through our service and inventory process for added replacement confidence.
  • Replacement assistance — We can help compare voltage, current, topology, gate-drive requirements, terminal layout, and mechanical fit when replacing a legacy IGBT module.