TOSHIBA – MG300J1US51 – IGBT Power Transistor – Reclaimed Part

Toshiba — MG300J1US51 IGBT Module

What it is

600 V / 300 A dual IGBT power module that integrates a complete half-bridge with fast free-wheel diodes. Designed for high-power switching and motor-control inverters; terminals are isolated from the case for easier heatsink design. :contentReference[oaicite:0]{index=0}

At-a-Glance

• Voltage / Current: 600 V / 300 A (DC module rating). :contentReference[oaicite:1]{index=1}
• Topology: Dual IGBT half-bridge with antiparallel diodes. :contentReference[oaicite:2]{index=2}
• Key Traits: V_CE(sat) ≤ 2.70 V @ 300 A; t_f ≤ 0.30 µs; diode t_rr ≤ 0.15 µs. :contentReference[oaicite:3]{index=3}
• Mounting: Screw terminals; isolated baseplate (2.5 kV_RMS, 1 min). :contentReference[oaicite:4]{index=4}

Features

• Low conduction loss — V_CE(sat) 2.10 V typ / 2.70 V max @ 300 A, V_GE=15 V, 25 °C. :contentReference[oaicite:5]{index=5}
• High-speed switching — t_f ≤ 0.30 µs @ 300 A; diode t_rr ≤ 0.15 µs @ 300 A. :contentReference[oaicite:6]{index=6}
• Isolated baseplate — 2.5 kV_RMS (1 min) terminals→base; simplifies mechanical design. :contentReference[oaicite:7]{index=7}

Technical Specifications

Compatibility / Representative Uses