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$128.54
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 150 A | N/A | N/A | N/A | ≈  430 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  430 g |
The Toshiba MG150Q2YS51 is a high-power 1200 V silicon N-channel IGBT module containing a complete half-bridge in a single electrically isolated package. Toshiba rates the module for 200 A collector current at TC = 25°C and 150 A at TC = 80°C, providing substantial current capability for demanding industrial power-switching applications.
The module combines two IGBT switching elements with built-in reverse-connected freewheel diodes. High input impedance, fast switching, low saturation voltage and an isolated mounting base make the MG150Q2YS51 well suited to motor controls, UPS inverters, industrial inverters, DC choppers, welding equipment and other high-power conversion systems.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG150Q2YS51 |
| Device Type | Silicon N-channel IGBT power module |
| Circuit Configuration | Complete half-bridge / two IGBT elements with built-in freewheel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 200 A @ TC = 25°C / 150 A @ TC = 80°C |
| Pulse Collector Current (ICP) | 400 A @ TC = 25°C / 300 A @ TC = 80°C, 1 ms |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Continuous Diode Current (IF) | 150 A |
| Peak Diode Current (IFM) | 300 A, 1 ms |
| Collector Power Dissipation (PC) | 1250 W @ TC = 25°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.8 V typ. / 3.6 V max @ IC = 150 A, VGE = 15 V, Tj = 25°C |
| VCE(sat) @ 125°C | 3.1 V typ. / 4.0 V max @ IC = 150 A, VGE = 15 V |
| Gate Threshold Voltage (VGE(off)) | 3.0–6.0 V @ IC = 150 mA, VCE = 5 V |
| Input Capacitance (Cies) | 18.0 nF typical @ VCE = 10 V, f = 1 MHz |
| Turn-On Delay Time (td(on)) | 0.05 µs typical |
| Rise Time (tr) | 0.05 µs typical |
| Turn-On Time (ton) | 0.20 µs typical |
| Turn-Off Delay Time (td(off)) | 0.50 µs typical |
| Fall Time (tf) | 0.10 µs typical / 0.30 µs max |
| Turn-Off Time (toff) | 0.60 µs typical |
| Switching Test Conditions | Inductive load; VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 5.6 Ω |
| Diode Forward Voltage (VF) | 2.4 V typ. / 3.5 V max @ IF = 150 A |
| Diode Reverse-Recovery Time (trr) | 0.10 µs typ. / 0.25 µs max |
| Thermal Resistance Rth(j-c) — IGBT | 0.10°C/W max |
| Thermal Resistance Rth(j-c) — Diode | 0.24°C/W max |
| Isolation Voltage | 2500 V AC for 1 minute, terminals-to-base |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Package | Toshiba 2-109C4A isolated-base power module |
| Mass | Approx. 430 g |
| Terminal Torque | 3 N·m |
| Mounting Torque | 3 N·m |
| Module | Representative Applications | Replacement Notes |
| MG150Q2YS51 | Motor controls; UPS inverters; AC drives; DC choppers; welders; switched-mode power supplies; industrial power conversion | Verify 1200 V rating, half-bridge topology, gate-drive requirements, terminal layout, package dimensions and cooling requirements before substitution. |
