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$128.54
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 150 A | N/A | N/A | N/A | ≈  430 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  430 g |
1200Â V / 150Â A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a reverse-connected fast/soft recovery diode. The insulated base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG150Q2YS51 |
| Device Type | Dual IGBT half-bridge with antiparallel fast/soft diodes |
| Collector-Emitter Voltage (VCES) | 1200Â V |
| Continuous Collector Current (IC) | 150 A @ TC=80 °C (200 A @ 25 °C) |
| Pulse Collector Current (ICP, 1 ms) | 300 A @ 80 °C / 400 A @ 25 °C |
| Forward Diode Current (IF / IFM) | 150Â A DC / 300Â A (1Â ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | 2.8 / 3.6 V @ IC=150 A, VGE=15 V, 25 °C; 3.1 / 4.0 V @ 125 °C |
| Gate Threshold (VGE(off)) | 3.0 – 6.0 V (IC=150 mA, VCE=5 V) |
| Capacitance (typ.) | Cies ~18Â nF (VCE=10Â V, f=1Â MHz) |
| Switching (typ.) | td(on) ~0.05 µs; tr ~0.05 µs; td(off) ~0.5 µs; tf 0.1–0.3 µs; toff ~0.6 µs |
| Diode (per leg) | VF 2.4 V typ / 3.5 V max @ 150 A; trr 0.1–0.25 µs |
| Thermal Resistance RthJC | Transistor 0.10 °C/W; Diode 0.24 °C/W |
| Collector Power Dissipation (PC) | 1250 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-109C4A isolated-base; ≈ 430 g |
| Recommended Torque | ≈ 3 N·m (terminals / mounting) |
| Configuration | Dual (2-pack) half-bridge |
| Module | Applications | Notes |
| MG150Q2YS51 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout and torque; observe isolation and cooling requirements. |
