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$45.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 100 A | N/A | N/A | N/A | โ ย 430ย g |
| Voltage | 1200 V |
| Amp/H | 100 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | โ ย 430ย g |
1200ย V / 100ย A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a
reverse-connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG100Q2YS51 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200ย V |
| Continuous Collector Current (IC) | 100ย A @ TC=80ย ยฐC (150ย A @ 25ย ยฐC) |
| Pulse Collector Current (ICP, 1ย ms) | 200ย A @ 80ย ยฐC / 300ย A @ 25ย ยฐC |
| Forward Diode Current (IF / IFM) | 100ย A DC / 200ย A (1ย ms) |
| Gate-Emitter Voltage (VGES) | ยฑ20ย V |
| VCE(sat) (typ./max) | 2.8 / 3.6ย V @ IC=100ย A, VGE=15ย V, 25ย ยฐC; 3.1 / 4.0ย V @ 125ย ยฐC |
| Gate Threshold (VGE(off)) | 3.0 โ 6.0ย V (IC=100ย mA) |
| Capacitances (typ.) | Cies ~12ย nF (VCE=10ย V, f=1ย MHz) |
| Switching (typ.) | td(on) ~0.05ย ยตs; tr ~0.05ย ยตs; td(off) ~0.5ย ยตs; tf 0.1โ0.3ย ยตs; toff ~0.6ย ยตs |
| Diode (per leg) | VF 2.4ย V typ / 3.5ย V max @ 100ย A; trr 0.1โ0.25ย ยตs |
| Thermal Resistance | RthJC(IGBT) 0.16ย ยฐC/W; RthJC(Diode) 0.47ย ยฐC/W |
| Isolation (terminalsโbase) | 2.5ย kVRMS / 1ย min |
| Operating / Storage | Tj โคย 150ย ยฐC / Tstg โ40โฆ+125ย ยฐC |
| Collector Power Dissipation | 660ย W @ TC=25ย ยฐC |
| Package / Mass | Toshiba 2-109C4A isolated-base module; โย 430ย g |
| Configuration | Dual (2-device) half-bridge |
| Recommended Torque | โย 3ย Nยทm (terminals / mounting) |
| Module | Applications | Notes |
| MG100Q2YS51 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout and torque; observe isolation and cooling requirements. |
