Toshiba – MG75Q2YS43 – IGBT Half-Bridge Power Module – 1200V 75A – Reclaimed Part

Toshiba — MG75Q2YS43 IGBT Power Module 1200 V • 75 A • Complete Half-Bridge • 2 N-Channel IGBTs with Built-In Diodes

What it is

The Toshiba MG75Q2YS43 is a 1200 V, 75 A IGBT power module designed for high-power industrial switching and motor-control applications. The module uses a two-element / 2U configuration, providing a complete half-bridge power stage in a single industrial module.

With its 1200 V blocking capability and 75 A current rating, the MG75Q2YS43 is suited to industrial motor drives, UPS inverters, DC choppers, power converters, welding equipment and other high-voltage switching systems. Built-in diode paths support switching of inductive loads while reducing the number of external power components required.

At-a-Glance

• Voltage Rating: 1200 V
• Collector Current: 75 A
• Device Type: IGBT power module
• Topology: Complete half-bridge / 2U configuration
• Switching Elements: 2 IGBTs
• Integrated Diodes: Built-in freewheel diodes
• Applications: UPS systems; motor drives; inverters; DC choppers; welders; industrial power conversion

Features

• 1200 V / 75 A power class — designed for high-voltage industrial switching applications.
• Complete half-bridge — two IGBT switching elements integrated into one 2U power module.
• Built-in freewheel diodes — integrated diode paths support inductive-load switching.
• High input impedance — IGBT technology provides efficient gate-controlled switching.
• Industrial power-module construction — designed for heatsink-mounted power-conversion equipment.
• Legacy equipment support — suitable for servicing systems originally engineered around Toshiba MG-series modules.

Technical Specifications

Applications / Replacement Considerations