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$126.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 300 A | N/A | N/A | N/A | โ 750 g |
| Voltage | 1200 V |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | โ 750 g |
1200ย V / 300ย A dual half-bridge IGBT module used in UPS, drives and high-power SMPS. Non-punch-through (NPT) IGBT die with fast, soft CAL free-wheel diodes in a low-inductance SEMITRANSย 3 housing; insulated DCB base simplifies heatsinking and grounding.
| Parameter | Value |
| Collector-Emitter Voltage (VCES) | 1200ย V |
| Continuous Collector Current (IC) | 300ย A @ Tc=25ย ยฐC; 210ย A @ Tc=80ย ยฐC |
| Repetitive Peak Collector Current (ICRM) | 400ย A |
| Gate-Emitter Voltage (VGES) | ยฑ20ย V |
| Short-circuit withstand (tpsc) | 10ย ยตs (typ. conditions) |
| Diode Forward Current (IF) | 260ย A @ Tc=25ย ยฐC; 180ย A @ Tc=80ย ยฐC |
| Repetitive Peak Diode Current (IFRM) | 400ย A |
| Surge Diode Current (IFSM) | 1800ย A, 10ย ms, sin., Tj=150ย ยฐC |
| Module IRMS | 500ย A |
| Junction / Storage Temp. | โ40โฆ+150ย ยฐC / โ40โฆ+125ย ยฐC |
| Isolation Voltage | 4000ย VAC, 1ย min |
| VCE(sat) @ IC=200ย A, VGE=15ย V | typ. 3.3ย V, max 3.85ย V |
| rCE (on) @ VGE=15ย V | 9ย mฮฉ (25ย ยฐC) ย /ย 11.5ย mฮฉ (125ย ยฐC) |
| Input/Output/Reverse Capacitances | Cies 18โ24ย nF; Coes 2.5โ3.2ย nF; Cres 1.0โ1.3ย nF |
| Total Gate Charge (Qg) | โย 2000ย nC |
| ton / tr (VCC=600ย V, IC=200ย A, RGon=3ย ฮฉ) | โย 130ย ns / 40ย ns |
| toff / tf (Tj=125ย ยฐC, RGoff=3ย ฮฉ) | โย 460ย ns / 30ย ns |
| Eon / Eoff @ 200ย A | โย 16ย mJ / 30ย mJ |
| Rth(j-c) (per IGBT) | 0.075ย K/W |
| Package / Dimensions | SEMITRANSย 3 โ 106ร62ร31ย mm |
| Configuration | Dual IGBT half-bridge (7-pin) with antiparallel diodes |
| Module | Applications | Notes |
| SKM300GB125D | UPS; SMPS; induction/resonant heating; welders; motor drives | Observe isolation and thermal specs; torque per SEMITRANSย 3 guidelines; use appropriate gate resistors. |
