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$116.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 200 A | N/A | N/A | N/A | 310 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 310 g |
The Mitsubishi Electric / Powerex CM200DY-12NF is a high-current 600 V, 200 A dual IGBT power module containing two IGBTs configured as a half-bridge. Each switching device incorporates an antiparallel fast free-wheel diode, providing the current paths required for efficient operation with inductive loads in inverter, motor-drive and power-conversion systems.
The dual-device configuration provides a complete inverter leg in a single module, reducing the number of discrete semiconductor packages and high-current interconnections required in multi-phase power systems. The CM200DY-12NF is well suited for UPS inverter and rectifier stages, variable-frequency drives, industrial motor controllers, welding equipment and other high-power switching applications.
Its combination of low collector-emitter saturation voltage, high pulsed-current capability, fast free-wheel diodes and an electrically isolated baseplate provides efficient switching with practical thermal management. For legacy industrial equipment, the CM200DY-12NF can also provide an important replacement option where the original Mitsubishi module must be matched for electrical characteristics, terminal arrangement and mechanical fit.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM200DY-12NF |
| Device Type | Dual IGBT half-bridge with antiparallel fast diodes |
| Circuit Configuration | Dual / 2-pack half-bridge |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 200 A @ TC=25 °C |
| Peak Collector Current | Approximately 400 A pulsed |
| Maximum Collector Dissipation | Approximately 780 W @ TC=25 °C |
| VCE(sat) | Approximately 1.6–1.8 V typical / approximately 2.2 V maximum @ VGE=15 V, IC=200 A, 25 °C |
| Gate-Emitter Voltage (VGES) | ±20 V maximum |
| Gate Threshold Voltage (VGE(th)) | Approximately 5–7 V; approximately 6 V typical |
| Input Capacitance (Cies) | Approximately 60–80 nF |
| Output Capacitance (Coes) | Approximately 3 nF |
| Reverse Transfer Capacitance (Cres) | Approximately 1.6 nF |
| Total Gate Charge (QG) | Approximately 1000–1200 nC under rated switching conditions |
| Free-Wheel Diode Forward Voltage | Approximately 2.0–2.5 V @ 200 A |
| Diode Reverse-Recovery Time | Approximately 0.2–0.3 µs |
| IGBT Thermal Resistance RthJC | Approximately 0.10–0.12 °C/W per IGBT |
| Diode Thermal Resistance RthJC | Approximately 0.15–0.18 °C/W per diode |
| Isolation Test Voltage | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Approximate Dimensions | 108 × 62 × 30 mm |
| Approximate Weight | 380–420 g |
| Terminal / Mounting Torque | Approximately 4.5 N·m (40 in-lb) for M6 hardware |
| Baseplate | Electrically isolated metal baseplate |
| Configuration | Dual IGBT half-bridge |
| Condition | Reclaimed Part |
| Module | Representative Applications | Replacement Notes |
| CM200DY-12NF | UPS inverter/rectifier bridges; industrial motor drives; variable-frequency drives; welding equipment; high-power converters; industrial power supplies | Confirm the complete CM200DY-12NF part number, half-bridge topology, terminal arrangement, gate-drive requirements, mechanical footprint and thermal requirements before substitution. |
