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$180.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 200 A | N/A | N/A | N/A | 400 g |
| Voltage | 1200 V |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 400 g |
1200 V, 200 A dual IGBT module in a screw-mount, insulated package. Each transistor includes a
reverse-connected super-fast free-wheel diode. Widely used in UPS bridges, motor drives, and general-purpose inverters
thanks to low VCE(sat), robust isolation, and straightforward thermal design.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM200DU-24F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 200 A (Tc=25 °C); 400 A peak (≤ Tj,max) |
| Max Collector Dissipation (Pc) | 890 W @ Tc=25 °C |
| VCE(sat) | typ. 1.8 V / max 2.4 V @ VGE=15 V, IC=200 A, 25 °C; typ. ≈ 1.9 V @ 125 °C |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | 5 – 7 V (typ. 6 V) |
| Capacitances (typ.) | Cies ≈ 78 nF; Coes ≈ 3.4 nF; Cres ≈ 2.0 nF |
| Total Gate Charge | QG ≈ 2200 nC @ 600 V, 200 A, 15 V |
| Diode (FWDi) | VEC max 3.2 V @ 200 A; trr ≈ 200 ns; Qrr ≈ 12.2 µC |
| Thermal Resistance | RthJC(IGBT, 1/2) ≈ 0.15 °C/W; RthJC(Diode, 1/2) ≈ 0.18 °C/W; RthCF(module, greased) ≈ 0.020 °C/W |
| Isolation | 2.5 kVRMS / 1 min (terminals–baseplate) |
| Operating / Storage | Tj −40…+150 °C; Tstg −40…+125 °C |
| Dimensions / Weight | ~108 × 62 × 29 mm; ≈ 400 g |
| Torque (M6) | ≈ 40 in-lb (terminals & mounting) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM200DU-24F | UPS inverter/rectifier bridges; industrial motor drives; battery-powered supplies | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |
