Toshiba – MG400G1UL1 – Darlington GTR Power Transistor Module – 450V 400A – Reclaimed Part

Toshiba — MG400G1UL1 Darlington Power Transistor Module 450 V • 400 A • Single NPN Darlington • Built-In Freewheel Diode • Isolated Baseplate

What it is

The Toshiba MG400G1UL1 is a high-current 450 V, 400 A silicon NPN Darlington power transistor module designed for high-power switching and motor-control applications. Toshiba identifies the device as a GTR module using a triple-diffused bipolar transistor structure with a built-in freewheeling diode.

The MG400G1UL1 combines high DC current gain, substantial current-handling capability and an electrically isolated collector/baseplate structure in a single-switch industrial package. Typical applications include motor drives, DC choppers, industrial switching equipment and legacy high-power conversion systems.

At-a-Glance

• Collector-Emitter Rating: 450 V V_CEO(sus)
• Collector Current: 400 A
• Device Type: Silicon NPN triple-diffused Darlington / GTR module
• Configuration: Single-switch / 1U power module
• Current Gain: h_FE ≥ 100 @ I_C = 400 A
• Integrated Diode: Built-in freewheeling diode
• Baseplate: Collector electrically isolated from case
• Applications: Motor drives; DC choppers; industrial switching; legacy power-conversion equipment

Features

• 400 A current capability — designed for demanding high-current industrial switching applications.
• High DC current gain — h_FE minimum 100 at I_C = 400 A.
• Darlington transistor construction — high-current bipolar switching architecture for legacy industrial power electronics.
• Built-in freewheel diode — integrated reverse-connected diode supports inductive-load switching.
• Single-switch configuration — one high-current transistor switching stage in Toshiba’s 1U module architecture.
• Electrically isolated collector — collector is isolated from the case for simplified heatsink integration.

Technical Specifications

Applications / Replacement Considerations