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$127.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 200 A | N/A | N/A | N/A | 380 – 420 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 380 – 420 g |
The Powerex CM200DY-24NF is a high-power 1200 V, 200 A dual IGBT module configured as a two-device half-bridge. Each IGBT is paired with an antiparallel fast free-wheel diode, providing a complete high-current switching leg in a rugged, electrically isolated power module.
Designed for demanding industrial power-conversion equipment, the CM200DY-24NF is commonly suited to UPS inverter and rectifier stages, industrial motor drives, variable-frequency drives, servo systems, DC-link converters, welding equipment, and other high-power inverter applications. Its 1200 V blocking capability provides substantial voltage headroom for high-voltage DC buses, while the 200 A current rating supports substantial continuous power handling.
The dual half-bridge configuration reduces component count when building inverter legs and provides closely matched power devices in a single package. An electrically isolated baseplate simplifies heatsink mounting and chassis integration, while the integrated free-wheel diodes provide the current path required when switching inductive loads such as motors, transformers, and inverter magnetics.
| Parameter | Value |
| Manufacturer | Powerex / Mitsubishi Electric |
| Part Number | CM200DY-24NF |
| Device Type | Dual IGBT half-bridge with antiparallel free-wheel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 200 A |
| Pulse Collector Current | Up to approximately 400 A |
| Maximum Collector Dissipation | Approximately 850–900 W @ TC=25 °C |
| VCE(sat) | Approximately 1.8–1.9 V typical / approximately 2.4 V max @ VGE=15 V, IC=200 A, 25 °C |
| Gate-Emitter Voltage (VGES) | ±20 V maximum |
| Gate Threshold VGE(th) | Approximately 5–7 V; 6 V typical |
| Input Capacitance (Cies) | Approximately 60–80 nF |
| Output Capacitance (Coes) | Approximately 3 nF |
| Reverse Transfer Capacitance (Cres) | Approximately 1.6 nF |
| Total Gate Charge | Approximately 1000–1200 nC depending on operating and test conditions |
| Free-Wheel Diodes | Integrated antiparallel fast-recovery diode for each IGBT |
| Diode Forward Voltage | Approximately 2.0–2.5 V @ 200 A |
| Diode Reverse-Recovery Time | Approximately 0.2–0.3 µs |
| Thermal Resistance — IGBT | RthJC approximately 0.10–0.12 °C/W per IGBT |
| Thermal Resistance — Diode | RthJC approximately 0.15–0.18 °C/W per diode |
| Isolation Voltage | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Package / Footprint | Industrial dual IGBT screw-terminal module with isolated baseplate |
| Approximate Dimensions | 108 × 62 × 30 mm class |
| Approximate Weight | 380–420 g |
| Typical Hardware Torque | Approximately 4.5 N·m / 40 in-lb for applicable M6 hardware |
| Configuration | Dual / 2-pack half-bridge |
| Condition | Reclaimed Part |
| Module | Applications | Replacement Notes |
| CM200DY-24NF | UPS inverter/rectifier bridges; industrial motor drives; variable-frequency drives; servo systems; DC-link converters; welding and high-power industrial equipment | Verify the complete CM200DY-24NF part number, terminal and gate pinout, mounting footprint, bus voltage, gate-drive requirements, and thermal specifications before installation. |
